| PART |
Description |
Maker |
| P4C164L-25JC P4C164L-25LC P4C164L-25PC P4C164-25LC |
x8 SRAM
1.5A MOSFET Drvr W/Boost, Inv, -40C to 85C, 16-SOIC 300mil, TUBE
1.5A DUAL MOSFET DRVR, -40C to 125C, 8-DFN, TUBE
1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, TUBE
1.5A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE x8的SRAM
|
Rochester Electronics, LLC
|
| P4C164L-25CC P4C164L-25CM P4C164-25CC P4C164-25CM |
1.5A Dual High-Speed Power MOSFET Drivers, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Driver, -40C to 125C, 8-MSOP, TUBE
1.5A MOSFET Drvr W/Boost, Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, 0C to 70C, 8-PDIP, TUBE
16 Bit Analog Processor, 0C to 70C, 16-SOIC 300mil, T/R
16 Bit Analog Processor, -25C to 85C, 16-CERDIP, TUBE
Precision Analog Front End, 0C to 70C, 24-SOIC 300mil, TUBE
1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Drvr, td Match, -40C to 85C, 8-SOIC 150mil, T/R
1.5A DUAL MOSFET DRVR, -40C to 85C, 8-DFN, T/R
1.5A Dual MOSFET Drvr, td Match, -55C to 125C, 8-CERDIP 300mil, TUBE
30V N-Channel PowerTrench MOSFET
1.2A Quad MOSFET Drvr, AND I/P, 0C to 70C, 14-PDIP, TUBE x8的SRAM
x8 SRAM x8的SRAM
|
MOSFETs
Infineon Technologies AG
|
| 194L-HE6G-175 800E-N130 800E-N141 800E-N157 194L-H |
6A Power MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE
6A Power MOSFET Drvr, -40C to 85C, 8-PDIP, TUBE
1.5A Floating Load Drvr, 0C to 70C, 8-PDIP, TUBE
SHAFT 230-350MM
SHAFT 24MM X 2
SHAFT 110-235
DISCONNECT HANDLE
HANDLE 80MM GREY/BLACK 拉手80毫米灰色/黑色
HANDLE 60MM GREY/BLACK 拉手60毫米灰色/黑色
|
Pericom Semiconductor, Corp.
NXP Semiconductors N.V.
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| 27C160 M27C160 M27C160-100B1 M27C160-100B1TR M27C1 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM 16兆位Mb x8兆x16紫外线存储器和OTP存储
IC BUFF/DRVR 16BIT 3ST 48-TSSOP 16兆位Mb x81兆x16紫外线存储器和OTP存储
16-Bit Transparent D-Type Flip-Flop 16兆位Mb x8兆x16紫外线存储器和OTP存储
IC ADRSS DRVR REG 1-4BIT 56TSSOP 16兆位Mb x8兆x16紫外线存储器和OTP存储
16-Bit Bi-directional Bus Transceiver
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| IPS022G IPS022GTR IPS022GPBF |
5.5 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO8
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Intelligent Power Switch 2 Channel Low Side Driver in a SO-8 Package
|
IRF[International Rectifier]
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL |
512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION
x8 SRAM x8的SRAM
|
Austin Semiconductor, Inc
|
|
